Sputter-etching
نویسندگان
چکیده
منابع مشابه
Sputter-Etching of Heterogeneous Surfaces
In conventional sputter etching, heterogeneous surfaces are eroded at generally unpredictable rates. The reasons for this are discussed and a solution to the problem is given: Based on control of redeposition, the technique involves the use of a device called a “catcher,” which is placed near the target of the sputtering chamber to trap re-emitted particles. Experiments are described which conf...
متن کامل3D Feature-Scale Simulation of Sputter Etching with Coupling to Equipment Simulation
Feature-scale simulation of sputter etching has been coupled to equipment parameters by means of transferring angular distributions of ions as provided by equipment simulation to our simulation code. Etching is modeled by performing ion flux integration for all node positions on a discretized 3D surface, taking into account shadowing by the geometry, the angular distribution of ions, and the sp...
متن کاملFormation of metal nanoparticles by short-distance sputter deposition in a reactive ion etching chamber
A new method is reported to form metal nanoparticles by sputter deposition inside a reactive ion etching chamber with a very short target-substrate distance. The distribution and morphology of nanoparticles are found to be affected by the distance, the ion concentration, and the sputtering time. Densely distributed nanoparticles of various compositions were fabricated on the substrates that wer...
متن کاملSputter deposition processes
Sputter deposition is a widely used technique to deposit thin films on substrates. The technique is based upon ion bombardment of a source material, the target. Ion bombardment results in a vapor due to a purely physical process, i.e. the sputtering of the target material. Hence, this technique is part of the class of physical vapor deposition techniques, which includes, for example, thermal ev...
متن کاملSputter-ion Pumps
The following paper outlines the working principles of sputter-ion pumps. The pumping mechanisms for reactive and inert gas species, as well as argon instability are explained. The operating pressure range, special designs for integrated linear pumps in accelerators and operational aspects are discussed.
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ژورنال
عنوان ژورنال: SHINKU
سال: 1973
ISSN: 0559-8516,1880-9413
DOI: 10.3131/jvsj.16.281